数码科技

Samsung 三星开始量产业界首款16Gb GDDR6显存,传输速率最高18Gbps

18/01/27更新:三星的GDDR6频率为12/14/16/18Gbps,密度可选8Gb/16Gb两种

======18/01/18=======


三星宣布开始量产16Gb GDDR6显存,传输速率最高18Gbps,预计2018年出现的新一代显卡将会采用GDDR6显存。


点击查看原图

三星的16Gb GDDR6显存基于10nm制程【10-19nm】,单颗粒16Gb(32bit, 2GB)容量。


img001.jpg

该显存可以达到18Gbps的Pin data rate,32-bit颗粒就是72GB/s

128-bit,288GB/s

256-bit,576GB/s

384-bit,864GB/s

对应高中低端产品。


详细对比表格如下

QQ截图20180118214336.png

虽然三星的PR里说的是18Gbps,官网上还是显示的是16Gbps,所以就把两个都列出来了

点击查看原图

三星16Gb GDDR6颗粒运行电压为1.35V,比广泛应用的GDDR5的1.55V要低13%,功耗降低约35%。

10nm制程的产能也比20nm 8Gb GDDR5高30%左右。



PR原文:

Samsung Electronics Starts Producing Industry’s First 16-Gigabit GDDR6 for Advanced Graphics Systems


Korea on January 18, 2018

New 16Gb GDDR6 offers twice the speed and density levels of currently available GDDR5 to address growing needs of advanced graphics market


Samsung Electronics, the world leader in advanced memory technology, today announced that it has started mass production of the industry’s first 16-gigabit (Gb) Graphics Double Data Rate 6 (GDDR6) memory for use in advanced graphics processing for gaming devices and graphics cards as well as automotive, network and artificial intelligence systems.

“Beginning with this early production of the industry’s first 16Gb GDDR6, we will offer a comprehensive graphics DRAM line-up, with the highest performance and densities, in a very timely manner,” said Jinman Han, senior vice president, Memory Product Planning & Application Engineering at Samsung Electronics. “By introducing next-generation GDDR6 products, we will strengthen our presence in the gaming and graphics card markets and accommodate the growing need for advanced graphics memory in automotive and network systems.


Built on Samsung’s advanced 10-nanomter (nm) class* process technology, the new GDDR6 memory comes in a 16Gb density, which doubles that of the company’s 20-nanometer 8Gb GDDR5 memory. The new solution performs at an 18-gigabits-per-second (Gbps) pin speed with data transfers of 72 gigabytes per second (GBps), which represents a more than two-fold increase over 8Gb GDDR5 with its 8Gbps pin speed.

Using an innovative, low-power circuit design, the new GDDR6 operates at 1.35V to lower energy consumption approximately 35 percent over the widely used GDDR5 at 1.55V. The 10nm-class 16Gb GDDR6 also brings about a 30 percent manufacturing productivity gain compared to the 20nm 8Gb GDDR5.

Samsung’s immediate production of GDDR6 will play a critical role in early launches of next-generation graphics cards and systems. With all of its improvements in density, performance and energy efficiency, the 16Gb GDDR6 will be widely used in rapidly growing fields such as 8K Ultra HD video processing, virtual reality (VR), augmented reality (AR) and artificial intelligence.

With extensive graphics memory lineups including the new 18Gbps 16Gb GDDR6 and recently introduced 2.4Gbps 8GB HBM2, Samsung expects to dramatically accelerate growth of premium memory market over the next several years.

* Editor’s Note: 10nm-class denotes a process technology node somewhere between 10 and 19 nanometers.

MOEPC.NET编辑,转载请保留出处

信息/图源:news.samsung.com

剧毒术士马文

留学中 uarch|HPC|FPGA|RISC-V 联系方式:discord 或者 weibo DM,其他平台见到的基本不是我。 pfp: hoshi @hoshi_u3

相关文章

5 评论

发表评论

邮箱地址不会被公开。 必填项已用*标注

返回顶部按钮